WebSurface modification of PMMA and FEP polymers using extreme ultraviolet (EUV) in two spectral ranges was investigated. A laser-plasma EUV source based on a double stream … WebUpon comparing 120K, 600K and 950K Mw PMMA at a CD of 50±5 nm range for different EUV-doses, it was identified that the line-edge-roughness (LER) values showed the following tend: 120K > 600K > 950K. This is shown in table S2. Also, the change in LER values w.r.t. EUV-dose for different Mw PMMA is shown in figure S1.
High performance resist for EUV lithography - ScienceDirect
WebMar 25, 2016 · We characterized EIDEC metal resist for EUV lithography by various measurement methods. The low-voltage aberration-corrected scanning transmission electron microscopy combined with electron energy-loss spectroscopy showed the morphology of metal resists in nanometer regions and enabled studying the distribution … WebMar 16, 2015 · The secondary electron blur for EUV is estimated to be 1 to 3 nm. 24 If, in reality, this is about 3 nm, we have probably reached the ultimate limit in … blue nike tech with letters
Dung-Yi Wu - Graduate Student - The Johns Hopkins University
Webdemonstrated that a ll fluorinated resists possess higher G(s) value s than either PMMA or ZEP and have no detectable G(x) value s. Utilizing e-beam and EUV interference lithographies , the photospeed of PMTFMA was found to be 2.8x and 4.0x faster , resp ectively, than PMMA . Keywords: e-beam, PMMA, ZEP, G(s), G(x), and EUV WebRegulatory. All PMMA materials and articles manufactured by Trinseo, Röhm, Lucite, Plazit and 3A Composites comply with all relevant legislation and regulations, both at national … WebAug 6, 2009 · The PMMA samples are mounted in the focal plane of the EUV collector or at some distance downstream this plane and irradiated for 10–60 s with 10-Hz repetition rate. The irradiated polymer samples were investigated using a scanning electron microscope. When the EUV fluence exceeds 10 mJ/cm2, smooth ablation of PMMA was obtained. clearing cookies on fire tablet